IGBT chip - メーカー・企業と製品の一覧

[Analysis Case] Evaluation of Carrier Concentration Distribution in Si-IGBT Chips

SRA evaluation of field stop layers and lifetime killers.

SRA can analyze the depth profile of carrier concentration distribution over a wide range from shallow regions (a few hundred nm) to deep regions (a few hundred μm). It is also possible to evaluate the in-plane distribution of resistance values at the sample surface or at specified depths. As an example, we will introduce a case where the depth profile of carrier concentration distribution for a commercially available Si-IGBT chip was evaluated, including the entire chip, the field stop layer, and the lifetime killer, as well as the in-plane distribution of resistance values at the irradiation depth of the lifetime killer using SRA.